 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SK2225 Silicon N Channel MOS FET Application High speed power switching TO-3PFM Features * * * * * High breakdown voltage (VDSS = 1500 V) High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter 2 1 1 3 2 3 1. Gate 2. Drain 3. Source Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 1500 20 2 7 2 50 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at Tc = 25 C 2SK2225 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 1500 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 VGS = 20 V, VDS = 0 VDS =1200 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 1 A VGS = 15 V * ID = 1 A VDS = 20 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 1 A VGS = 10 V RL = 30 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- -- 2.0 -- -- -- -- 9 1 500 4.0 12 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 0.45 0.75 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 990 125 60 17 50 150 50 0.9 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 2 A, VGS = 0 IF = 20 A, VGS = 0, diF / dt = 100 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 1750 -- ns -------------------------------------------------------------------------------------- 2SK2225 Power vs. Temperature Derating 80 Pch (W) I D (A) 10 3 1 0.3 Maximum Safe Operation Area 10 s 0 10 PW = 60 1 10 m s s s m (1 C D Channel Dissipation O Drain Current pe 40 sh 0.1 Operation in 0.03 20 this area is limited by R DS(on) Ta = 25 C 0 50 100 Case Temperature 150 Tc (C) 200 0.01 10 30 100 300 1000 3000 10000 Drain to Source Voltage V DS (V) tio ra n c (T = ot ) 25 C ) Typical Output Characteristics 5 Pulse Test 7V 3 6V ID 1.2 Drain Current (A) 1.6 15 V 2.0 10 V 8V Typical Transfer Characteristics Drain Current I D (A) 4 V DS = 25 V Pulse Test 2 0.8 Tc = 75 C 25 C -25 C 1 5V VGS = 4 V 0.4 0 20 40 60 Drain to Source Voltage 80 100 V DS (V) 0 2 4 6 Gate to Source Voltage 8 10 V GS (V) 2SK2225 Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 40 I D= 3 A 30 2A 1A 0.5 A 0 4 8 12 Gate to Source Voltage 16 V GS (V) 20 Drain to Source On State Resistance R DS(on) ( ) Drain to Source Saturation Voltage V DS(on) (V) 50 Static Drain to Source State Resistance vs. Drain Current 50 20 10 5 VGS = 10 V 15 V 20 2 Pulse Test 1 0.5 0.1 10 0.2 0.5 1 Drain Current 2 5 I D (A) 10 Static Drain to Source on State Resistance R DS(on) ( ) Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature 20 I D= 2 A Forward Transfer Admittance vs. Drain Current 10 5 2 1 0.5 V DS = 25 V Pulse Test Tc = -25 C 25 C 75 C 16 12 0.5 A, 1 A 8 4 0 -40 VGS = 15 V Pulse Test 0 40 80 120 160 Case Temperature Tc (C) 0.2 0.1 0.05 0.1 0.2 0.5 1 2 5 Drain Current I D (A) 2SK2225 5000 Body-Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 10000 Reverse Recovery Time trr (ns) 2000 1000 500 Capacitance C (pF) VGS = 0 f = 1 MHz 1000 Ciss 200 100 50 di / dt = 100 A / s, Ta = 25 C V GS = 0, Pulse Test 100 Coss Crss 10 0.05 0.1 0.2 0.5 1 2 Reverse Drain Current I DR (A) 5 0 10 20 30 40 50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) V GS (V) 1000 Switching Characteristics 20 1000 500 Switching Time t (ns) 800 V DD = 250 V 400 V 600 V VDS 16 VGS 12 t d(off) 200 100 V GS = 10 V PW = 2 s duty < 1 % Drain to Source Voltage 600 Gate to Source Voltage tf 50 400 8 V DD = 250 V 400 V 600 V tr t d(on) 200 I D = 2.5 A 4 20 10 0 20 40 60 80 Gate Charge Qg (nc) 0 100 0.05 0.1 0.2 0.5 Drain Current 1 2 I D (A) 5 2SK2225 Reverse Drain Current vs. Source to Drain Voltage 5 Reverse Drain Current I DR (A) Pulse Test 4 3 2 1 10 V, 15 V V GS = 0, -5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance s (t) Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 0.05 0.1 ch - c(t) = s (t) * ch - c ch - c = 2.50 C/W, Tc = 25 C PDM 0.03 0.02 0.01 1s t ho D= PW T PW T pu lse 0.01 10 100 1m 10 m Pulse Width 100 m PW (S) 1 10 2SK2225 Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 V DD = 30 V Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(off) tf 90% td(on) tr |
Price & Availability of 2SK2225
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |